VS2598AD的P TO P兼容物料DC005NG-I，30V90A 內(nèi)阻4.5mΩ 封裝TO-252

型號：DC005NG-I

電壓電流：30V90A

內(nèi)阻：4.5mΩ

封裝：TO-252

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.

Features：

1) VDS=30V,ID=90A,RDS(ON)<4.5mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.